Solution-Driven HfLaOx-Based Gate Dielectrics for Thin Film Transistors and Unipolar Inverters
| Autor: | Wenhao Wang, Xiaofen Xu, Leini Wang, Yongchun Zhang, Gang He |
|---|---|
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Electron Devices. 68:4437-4443 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2021.3095039 |
| Popis: | In this article, the preparation of HfLaOx gate dielectric thin films by the spin coating method is proposed. The in-depth physical properties of the as-prepared HfLaOx films were investigated as functions of annealing temperatures. Decided by the key performance indicators of current density, smooth surface, and areal capacitance of HfLaOx films with different annealing temperatures, optimized performance parameters with annealing temperature 550 °C have been obtained. To verify the feasibility of HfLaOx films as dielectric material, In2O3/HfLaOx thin-film transistors (TFTs) have been fabricated and device characterizations have been carried out. As a result, it has been detected that the In2O3/HfLaOx TFTs with optimized annealing temperature of 300 °C demonstrate superior electrical performance, including a high ${I}_{ \mathrm{\scriptscriptstyle ON}} / {I}_{ \mathrm{\scriptscriptstyle OFF}}$ of ~106, a high $\mu _{\text {FE}}$ of 17.09 cm2V−1s−1, a low ${V}_{\text {TH}}$ of 0.09 V, a small interfacial trap states ( ${D}_{\text {it}}$ ) of $1.94\times 10^{{12}}$ cm−2, and a small threshold voltage shift of 0.23 V under PBS test and 0.11 V under NBS test after 3600 s bias stress, respectively. To confirm TFTs’ potential applications in logic circuits, a resistor-loaded inverter was integrated and the maximum voltage gain of 7.60 was demonstrated at an ultra-low operating voltage of 2.5 V. Current observations have indicated the great application prospects of solution-derived HfLaOx-gated TFTs in low-cost and excellent performance electronic devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|