RESURF p-n Diode With a Buried Layer, a Comprehensive Study

Autor:	Jeng Gong, Hsiao-Chin Tuan, Ru-Yi Su, Chih-Fang Huang, C.H. Tsai, Fu-Jen Yang
Rok vydání:	2013
Předmět:	Materials science Avalanche diode business.industry Backward diode Electronic Optical and Magnetic Materials Optoelectronics Breakdown voltage Zener diode Electrical and Electronic Engineering business Layer (electronics) Step recovery diode Diode p–n diode
Zdroj:	IEEE Transactions on Electron Devices. 60:3835-3841
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2013.2283582
Popis:	In this paper, important parameters of the p-buried layer of a high-voltage reduced surface field p-n diode are analyzed and discussed in terms of effects on device performance, including breakdown voltage and specific turn-on resistance, Ron,sp. Guidelines for optimizing the vertical position, lateral location, and doping concentration of the p-buried layer are suggested. The experimental results demonstrate that the p-n diode with the proposed p-buried layer optimization design can improve breakdown voltage by 30.7% but only increases 2.7% in specific on-resistance Ron,sp.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9c43012be6f623c0047cd84625ec1609 https://doi.org/10.1109/ted.2013.2283582 Zobrazit plný text záznamu