Design of High-Speed GNRFET Based Ternary Logic Circuits

Autor: JETYA BANOTHU, SANGEETA NAKHATE
Rok vydání: 2022
DOI: 10.21203/rs.3.rs-1868250/v1
Popis: Utilization of energy sifting to expand the exchanging execution of Graphene Nanoribbon Field-Effect Transistors (GNRFETs) is the main concern of this paper. For similar number of logic bits, multiple valued logic (MVL) be able to communicate a dramatically more prominent number of data than double rationale. Few excellent electromechanical possessions of the Graphene Nano Ribbon Field Effect Transistor (GNRFET), has capacity to control the threshold voltage. GNRFET is be exceptionally encouraging for planning MVL logic gates when contrasted with ordinary and other arising gadget advancements. One of the suggested approaches for accomplishing various voltage levels in the MVL circuit is to change the limit voltage. GNRFET is utilized to show the plan of fundamental ternary logic gates like inverters, TNAND and TNOR. A correlation of GNRFET-established on ternary logic gates and circuits with them in view of exemplary CMOS and GNRFET innovation be situated in utilizing delay, total power and power delay- product (PDP) like measurements. The proposed analysis is done with the assistance of the H-SPICE tool and a GNRFET 16nm model. With proposed design average percent reduction in delay 2%, 6% and 6% for STI, TNAND and TNOR design respectively, this tends to enhancement of the speed of Ternary logic Circuits.
Databáze: OpenAIRE