A realistic trap distribution model for numerical simulation of amorphous silicon thin-film transistors and phototransistors
| Autor: | S.G. Chamberlain, Prasad S. Gudem |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Amorphous silicon
Materials science Computer simulation Silicon business.industry Transistor chemistry.chemical_element Electronic Optical and Magnetic Materials Amorphous solid law.invention Photodiode chemistry.chemical_compound Semiconductor chemistry law Thin-film transistor Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 42:1333-1339 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.391218 |
| Popis: | Numerical simulation of amorphous silicon phototransistors using the conventional trap distribution model is shown to give drain-to-source currents lower than experimentally reported values by about a factor of ten. Several attempts to optimize the semiconductor parameters to obtain a good agreement between the experimental and simulation data proved unsuccessful. We propose a more realistic model for the trap distribution which consists of both bulk traps and surface traps. Incorporating this model into a two-dimensional device simulator, simulation results in good agreement with experimental data are obtained for both thin-film transistors and phototransistors. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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