| Autor: |
Z.H. Kalman, S. Weissmann, J. Chaudhuri, George J. Weng |
| Rok vydání: |
1980 |
| Předmět: |
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| Zdroj: |
Journal of Applied Crystallography. 13:290-296 |
| ISSN: |
0021-8898 |
| DOI: |
10.1107/s0021889880012083 |
| Popis: |
The strain distribution in the vicinity of the notches of a double-notched, elastically bent silicon crystal was determined by measuring the diffracted X-ray intensities. The measurements were carried out on traverse-oscillation topographs of a crystal section extending through both notches. Strain distributions were determined by measuring the local densities of silver deposits (measurements of `opacities') with a scanning electron microscope. It was shown that both the density range and spatial resolution of X-ray densitometry were larger by an order of magnitude than those of optical densitometry. The strain concentration factors associated with the notches were measured experimentally and calculated by continuum mechanics. The results were in satisfactory agreement. Also, the experimentally found rise of strains, to a maximum in the critical area adjacent to the notch root, followed the trend predicted by continuum mechanics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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