Effects of electron radiation on commercial power MOSFET with buck converter application
| Autor: | Dhiyauddin Ahmad Fauzi, Norasmahan Muridan, Sheik Fareed Ookar Abubakkar, Yusof Abdullah, Nurul Fadzlin Hasbullah, Nor Farahidah Za'bah |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science 010308 nuclear & particles physics Buck converter business.industry Transistor Ćuk converter Buck–boost converter 01 natural sciences law.invention Threshold voltage Nuclear Energy and Engineering law 0103 physical sciences Boost converter Optoelectronics Power MOSFET business Voltage |
| Zdroj: | Nuclear Science and Techniques. 28 |
| ISSN: | 2210-3147 1001-8042 |
| DOI: | 10.1007/s41365-017-0189-8 |
| Popis: | Microelectronic power converters such as buck and boost converter are required to be tolerant to radiations including electron radiation. This paper examines electron radiation effects on the I–V characteristics of VDMOSFET and its corresponding effects in buck converter. Analysis of the electrical characteristics shows that after irradiation the threshold voltage and drain current for all VDMOSFETs degraded more than two orders of magnitude. The impact of this electrical degradation has been investigated in an application of typical buck converter circuit. The buck converter with n-channel switching transistor shows that after irradiation its output voltage increased with the drain current in the n-channel ZVN4424A VDMOSFET, while the buck converter with p-channel switching transistor shows its output voltage decreased with the drain current in the p-channel ZVP4424A VDMOSFET after irradiation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink