Characterization of silicon layers via guided wave optics
| Autor: | Michel Olivier, Jean‐Claude Peuzin |
|---|---|
| Rok vydání: | 1978 |
| Předmět: |
Amorphous silicon
Birefringence Materials science Physics and Astronomy (miscellaneous) Silicon Wave propagation business.industry Hybrid silicon laser Nanocrystalline silicon chemistry.chemical_element chemistry.chemical_compound Optics Silicon on sapphire chemistry Optoelectronics Thin film business |
| Zdroj: | Applied Physics Letters. 32:386-388 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.90063 |
| Popis: | The usefulness of guided wave optics as a tool for characterizing general purpose thin films is demonstrated in two cases of practical interest, i.e., silicon on sapphire and amorphous silicon on glass. Important results are as follows: (i) optical wave propagation at λ=1.15 μm has been observed along a few millimeters in silicon layers; (ii) silicon on sapphire layers show a very high photoelastically induced quasiuniaxial birefringence (Δn≃0.02); (iii) amorphous silicon layers exhibit a nonrectangular index profile, a high birefringence (Δn≃0.02), and finally an anomalously low value of their mean ordinary index (n≃3.04±0.01). |
| Databáze: | OpenAIRE |
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