Wafer heating mechanisms in a molecular gas, inductively coupled plasma: in situ, real time wafer surface measurements and three-dimensional thermal modeling

Autor:	D. B. Graves, M. J. Titus
Rok vydání:	2008
Předmět:	Argon business.industry chemistry.chemical_element Surfaces and Interfaces Plasma Condensed Matter Physics Temperature measurement Surfaces Coatings and Films chemistry Heat transfer Thermal Optoelectronics Wafer Plasma diagnostics Atomic physics Inductively coupled plasma business
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:1154-1160
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.2953713
Popis:	The authors report measurements and modeling of wafer heating mechanisms in an Ar∕O2 inductively coupled plasma (ICP). The authors employed a commercially available on-wafer sensor system (PlasmaTemp™ developed by KLA-Tencor) consisting of an on-board electronics module housing battery power and data storage with 30 temperature sensors embedded onto the wafer at different radial positions. This system allows for real time, in situ wafer temperature measurements. Wafer heating mechanisms were investigated by combining temperature measurements from the PlasmaTemp™ sensor wafer with a three-dimensional heat transfer model of the wafer and a model of the ICP. Comparisons between pure Ar and Ar∕O2 discharges demonstrated that two additional wafer heating mechanisms can be important in molecular gas plasmas compared to atomic gas discharges. The two mechanisms are heating from the gas phase and O-atom surface recombination. These mechanisms were shown to contribute as much as 60% to wafer heating under conditio...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9c13ffad74114ff27aa8b2657c397e89 https://doi.org/10.1116/1.2953713 Zobrazit plný text záznamu