Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel
| Autor: | Robert A. Reed, Peide D. Ye, En Xia Zhang, Kai Ni, Rong Jiang, Maruf A. Bhuiyan, T. P. Ma, Daniel M. Fleetwood, Heng Wu, Shufeng Ren |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Ultra thin body Materials science 010308 nuclear & particles physics business.industry Insulator (electricity) Dielectric 01 natural sciences Threshold voltage Nuclear Energy and Engineering Absorbed dose 0103 physical sciences Optoelectronics Irradiation Electrical and Electronic Engineering business Radiation response Communication channel |
| Zdroj: | IEEE Transactions on Nuclear Science. 64:176-180 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2016.2624294 |
| Popis: | Total ionizing dose (TID) effects in ultra-thin body Ge on Insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel have been studied. 10-keV X-ray irradiation leads to net hole trapping at the top and bottom Ge/dielectric interfaces of both GOI NFETs and PFETs. The Ge channel thickness and post-oxidation processing can strongly affect the radiation response. Application of negative back-gate bias can moderate the radiation-induced threshold-voltage shifts. |
| Databáze: | OpenAIRE |
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