The effect of illumination on dark conductivity and photoconductivity of hydrogenated amorphous silicon layered films

Autor:	N. N. Ormont, I. A. Kurova
Rok vydání:	2009
Předmět:	Amorphous silicon Materials science Silicon Annealing (metallurgy) business.industry Photoconductivity General Physics and Astronomy chemistry.chemical_element Dark conductivity Plasma Amorphous solid chemistry.chemical_compound Amplitude chemistry Optoelectronics business
Zdroj:	Moscow University Physics Bulletin. 64:527-531
ISSN:	1934-8460 0027-1349
DOI:	10.3103/s0027134909050129
Popis:	It is established that both the amplitude and temperature dependence of dark conductivity and photoconductivity of preilluminated high-sensitivity layered films of amorphous hydrogenated silicon (a-Si:H) prepared by cyclic deposition with layer-by-layer annealing in hydrogen plasma depend on illumination temperature. The relaxation kinetics of the dark conductivity of these films after illumination is shut off is found to be nonmonotonic. The observed effects can be explained by fast and slow changes in the distribution of energy state density below the midgap during and after illumination.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9c03c19bae9c4467c193c196a745e9f9 https://doi.org/10.3103/s0027134909050129 Zobrazit plný text záznamu Full text from SpringerLink