High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

Autor:	Yu Ming Hsin, Pei Chin Chiu, Hsuan Wei Huang, Wei Jen Hsueh, Cheng Yu Chen, Jen-Inn Chyi
Rok vydání:	2015
Předmět:	Electron mobility Materials science Condensed matter physics business.industry Condensed Matter Physics Inorganic Chemistry Materials Chemistry Optoelectronics Field-effect transistor business Anisotropy Layer (electronics) Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 425:385-388
ISSN:	0022-0248
Popis:	Growth of InGaSb/AlSb high hole mobility quantum well field effect transistors (QW FETs) on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored. With an optimized growth temperature for the InGaSb/AlSb QW, hole mobility of 770 cm 2 /V s and 3060 cm 2 /V s have been achieved at room temperature and 77 K, respectively. It is also found that the twins in the samples do not cause significant anisotropic behavior of the InGaSb QW FETs in term of gate direction.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9beeb542603063c5a22ac14b0102b164 https://doi.org/10.1016/j.jcrysgro.2015.03.052 Zobrazit plný text záznamu Full Text from ScienceDirect