Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x = 0.32−1.0) single crystals
| Autor: | Weilin Jiang, Vaithiyalingam Shutthanandan, Jinxin Peng, Limin Zhang, Tieshan Wang, Zihua Zhu, Jiandong Zhang, Amila Dissanayake, Wensi Ai |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Rutherford backscattering spectrometry Channelling 01 natural sciences Fluence Ion Secondary ion mass spectrometry Ion implantation chemistry 0103 physical sciences Irradiation 0210 nano-technology Indium |
| Zdroj: | Journal of Applied Physics. 119:245704 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Lattice disorder and compositional changes in InxGa1-xN (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al2O3 substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 1013 cm−2, the relative level of lattice disorder in InxGa1-xN increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich InxGa1-xN (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich InxGa1-xN (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich InxGa1-xN and GaN. The results from this study indicate an extreme susceptibility of the high In-content InxGa1-xN to heavy-ion irradi... |
| Databáze: | OpenAIRE |
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