Investigation of the Impact of Externally Applied Out-of-Plane Stress on Ferroelectric FET
| Autor: | Philippe Matagne, Dimitrios Velenis, Sergiu Clima, Gaspard Hiblot, Mihaela Loana Popovici, Yefan Liu, Ingrid De Wolf, Ben Kaczer |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Ab initio chemistry.chemical_element 01 natural sciences Ferroelectricity Electronic Optical and Magnetic Materials Hafnium Stress (mechanics) Hysteresis Compressive strength chemistry 0103 physical sciences Field-effect transistor Nanoindenter Electrical and Electronic Engineering |
| Zdroj: | IEEE Electron Device Letters. 42:264-267 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | The impact of out-of-plane mechanical stress on a hafnium zirconium oxide (HZO) based ferroelectric field effect transistor (FeFET) is studied using a nanoindenter combined with in-situ probing. It is demonstrated that the hysteresis loop shrinks with increasing compressive stress. The device current shows significant dependence on mechanical stress. By ab initio simulations, the Landau potentials of HZO under stress are calculated. The parameters of the Landau-Khalatnikov (LK) equation are extracted and used as input to a TCAD model. The simulation results match well to the experimental results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|