| Autor: |
K.L. Jones, G.A. Antcliffe, S.E. Botts, A.W. Hoffman, G.E. Grimm, W.J. Parrish |
| Rok vydání: |
1980 |
| Předmět: |
|
| Zdroj: |
1980 International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.1980.189882 |
| Popis: |
High value polysilicon resistors have been fabricated using conventional LSI processing and characterized over the temperature range 10°K - 300°K. The temperature dependance of resistivity has been measured for devices in the 108- 1010Ω range and will be discussed in terms of the grain structure of the film. Experimental data will be presented on the excess noise as a function of temperature, resistivity and current. A novel technique using a CCD is used to perform reliable noise measurements at low currents (5 - 100pA). The noise will be discussed in terms of thermionic emission and percolation which can explain the observed data. It appears that the temperature dependence of the noise is governed by thermally dependent trapping effects. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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