Overgrowth of GaN on GaN nanowires produced by mask-less etching

Autor:	Pavel Frajtag, Nadia A. El-Masry, Tanja Paskova, A. M. Hosalli, Salah M. Bedair, Joshua P. Samberg, Peter C. Colter
Rok vydání:	2012
Předmět:	Materials science business.industry Etching rate Nanowire Nanotechnology Condensed Matter Physics Inorganic Chemistry Etching (microfabrication) Residual strain Materials Chemistry Sapphire Optoelectronics Dislocation Reactive-ion etching business
Zdroj:	Journal of Crystal Growth. 352:203-208
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2011.12.055
Popis:	We report on the generation of GaN nanowires (NWs) using mask-less reactive ion etching (RIE). The NWs are believed to be the result of a high etching rate in regions where a high dislocation density is present in the GaN films grown on sapphire substrates. We have studied the effect of defect densities in the original GaN films and its relation to the generation of these NWs. We show that defect reduction in the overgrown GaN is related to the presence of a network of embedded voids generated between these nanowires during the regrowth on the etched nanowires. We show that further reduction in dislocation density can be achieved by repeating the process of nanowire generation and overgrowth. Also we report on the residual strain and curvature in GaN after the first and second embedded voids approach (EVA).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9bc62b1828efb8fe4da7ca8ab0e2c27b https://doi.org/10.1016/j.jcrysgro.2011.12.055 Zobrazit plný text záznamu Full Text from ScienceDirect