Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures
| Autor: | Pavel Hlídek, K. Zdansky, L. Pekarek |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Absorption spectroscopy Annealing (metallurgy) Doping Analytical chemistry Mineralogy Condensed Matter Physics Acceptor Crystallographic defect Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Hall effect Electrical resistivity and conductivity Materials Chemistry Indium phosphide Electrical and Electronic Engineering |
| Zdroj: | Semiconductor Science and Technology. 18:938-944 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | High-purity InP crystals were grown by the liquid encapsulated Czochralski method from undoped InP melt and from the melt doped with Ca, Zn, Fe or Mn or co-doped with Ti and Zn. Wafers from the grown crystals were annealed in phosphorus ambient for 95 h at 950 °C and cooled slowly. Conversion to the semi-insulating state by annealing was studied by temperature-dependent Hall measurements and low-temperature optical absorption spectroscopy. The undoped samples with electron concentration below 1 × 1016 cm−3 became semi-insulating due to the decreasing content of shallow donors and the increasing content of the active Fe2+ deep acceptors. The narrow absorption line of hydrogen vibrations in the complex VInH4 disappeared after annealing and three new narrow lines appeared instead. Besides, new lines appeared which were interpreted as due to Fe2+ featured by a nearby lattice defect. The n-type InP lightly doped with Zn became semi-insulating due to the formation of a new deep acceptor level at 0.33 eV below the conduction band edge. |
| Databáze: | OpenAIRE |
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