Infrared and Raman Study of Amorphous Silicon Carbide Thin Films Deposited by Radiofrequency Cosputtering

Autor:	El Maati Ech-Chamikh, Mustapha Azizan, A. Essafti, Abdelkader Outzourhit, L. Nkhaili, Abdel-ilah El Khalfi, Y. Ijdiyaou
Rok vydání:	2014
Předmět:	Amorphous silicon Silicon Infrared Analytical chemistry Infrared spectroscopy chemistry.chemical_element Atomic and Molecular Physics and Optics Analytical Chemistry Carbide chemistry.chemical_compound symbols.namesake chemistry Silicon carbide symbols Thin film Raman spectroscopy Spectroscopy
Zdroj:	Spectroscopy Letters. 47:392-396
ISSN:	1532-2289 0038-7010
DOI:	10.1080/00387010.2013.840849
Popis:	Amorphous silicon carbide thin films have been deposited by radiofrequency cosputtering. These films were deposited from a composite target consisting of silicon fragments regularly distributed on the surface of a pure graphite disc for different relative silicon-to-carbon area ratio values (15%, 25%, 35%, 50%, and 65%), with a radiofrequency power of 250 watts. Structural properties of these films were investigated by Fourier transform infrared and Raman spectroscopy techniques. The infrared absorption spectra obtained on as-deposited films show the presence of two absorption bands, which are assigned to vibrational modes of silicon–carbon and silicon–oxygen bonds. The content of silicon–carbon bonds increases with increasing the relative silicon-to-carbon area ratio from 15% to 35% and then decreases for greater values. The maximum value of silicon–carbon bonds’ content, occurring at about the relative silicon-to-carbon area ratio equal to 35%, indicates that this surface ratio value leads to t...
Databáze:	OpenAIRE
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