Modeling of void formation in phase change memory devices
| Autor: | Chung H. Lam, Helena Silva, Norma E. Sosa, Sangbum Kim, Matt BrightSky, Yu Zhu, Zachary Woods, Hyeong Soo Kim, Adam Cywar, Ali Gokirmak, Hyung Keun Kim |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Void (astronomy) Materials science Fabrication Annealing (metallurgy) Nucleation 02 engineering and technology GeSbTe 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Amorphous solid Phase-change memory chemistry.chemical_compound chemistry 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Composite material 0210 nano-technology Joule heating |
| Zdroj: | Solid-State Electronics. 164:107684 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2019.107684 |
| Popis: | An empirical, versatile finite-element model is developed to predict void formation in as-deposited or melt-quenched amorphous Ge2Sb2Te5 during annealing. This model incorporates void formation with nucleation and growth of the crystals along with thermal models that capture laser heating of the nano-structures during device fabrication. Modeling of void formation during Joule heating or furnace annealing can be implemented in a similar way. The modeling results are compared to example experimental results obtained from pore-cell phase change memory structures. |
| Databáze: | OpenAIRE |
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