Highly selective etch process for silicon-on-insulator nano-devices
| Autor: | W. Henschel, Max C. Lemme, T. Mollenhauer, Johnson Kwame Efavi, Yordan M. Georgiev, Heinrich Kurz, J. Niehusmann, H. D. B. Gottlob, Thorsten Wahlbrink, P. Haring Bolivar |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Nanostructure Silicon photonics Silicon Silicon on insulator chemistry.chemical_element Nanotechnology Integrated circuit Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry Nanoelectronics law MOSFET Electrical and Electronic Engineering Reactive-ion etching |
| Zdroj: | Microelectronic Engineering. :212-217 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2004.12.029 |
| Popis: | Reactive ion etch (RIE) processes with HBr/O"2 chemistry are optimized for processing of functional nanostructures based on silicon and polysilicon. The etch rate, etch selectivity, anisotropy and sidewall roughness are investigated for specific applications. The potential of this process technology for nanoscale functional devices is demonstrated by MOSFETs with 12nm gate length and optimized photonic devices with ultrahigh Q-factors. |
| Databáze: | OpenAIRE |
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