Effect of Chemicals on Metal Contamination on Silicon Wafers
| Autor: | C. L. Claeys, M. Schaekers, O. J. Anttila, M. V. Tilli |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Metal contamination
Materials science Hydrogen Silicon Renewable Energy Sustainability and the Environment Inorganic chemistry Mineralogy chemistry.chemical_element Standard solution Condensed Matter Physics Peroxide Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Electrochemistry Particle Ammonium Wafer |
| Zdroj: | Journal of The Electrochemical Society. 139:1180-1185 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2069362 |
| Popis: | Chemicals from various suppliers were tested for the metal contamination levels left on silicon wafers after cleaning. During the investigations, hydrochloric acids and ammonium hydroxides from three vendors and hydrogen peroxides from four vendors, were evaluated. The wafers were cleaned in RCA standard solutions, after which particle counts and metal contamination were measured. Total reflection x-ray fluorescence analysis was used for metal contamination measurements. Hot ammonium hydroxide-hydrogen peroxide mixture (APM), an efficient particle remover, results in iron deposition on silicon |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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