| Autor: |
Suguru Ooki, Gou Andou, K. Nakajima, Kenji Kimura |
| Rok vydání: |
1999 |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings. |
| DOI: |
10.1063/1.59131 |
| Popis: |
The production process of secondary electrons at surface is investigated utilizing specular reflection of MeV protons at SnTe(001) and KCl(001) surfaces. The secondary-electron yield induced by 0.5-MeV protons specularly reflected from SnTe(001) is about 30 electrons/proton, while the yield is 100–160 electron/proton for KCl(001), indicating enhancement of the secondary-electron production process in front of insulator surfaces. The enhancement can be ascribed to the almost complete conversion efficiency of the excited surface plasmons into electron-hole pairs and the large band gap, which results in efficient production of free electrons over the vacuum level by single electron excitation process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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