Fabrication of Aharonov-Bohm rings in Si/SiGe heterostructure
| Autor: | S. Washburn, Kam-Leung Lee, J. O. Chu, W. X. Gao, K. Ismail |
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| Rok vydání: | 1995 |
| Předmět: |
Condensed matter physics
Magnetoresistance Chemistry Doping Conductance Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Computer Science::Other Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Etching (microfabrication) Electrical and Electronic Engineering Reactive-ion etching Lithography Electron-beam lithography |
| Zdroj: | Microelectronic Engineering. 27:79-82 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(94)00060-8 |
| Popis: | A sub-micron trenching technique has been developed to fabricate Aharonov-Bohm ring structures in a high mobility Si/Si"0"."7Ge"0"."3 modulation doped heterostructure. Scanning electron-beam lithography is used to expose the area defining the ring contour, and reactive-ion etching follows to recess this area, thus forcing electrons to flow inside the ring. Conductance in the Si/SiGe rings exhibits oscillations in magnetoresistance, which is the first observation of this effect in Si-based materials. The amplitude of the oscillations is comparable to that of similar devices on similar mobility GaAs/GaAlAs heterostructures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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