Effects of ultrathin oxides in conducting MIS structures on GaAs
| Autor: | Stephen J. Fonash, R. B. Childs, T. E. Sullivan, J. M. Ruths |
|---|---|
| Rok vydání: | 1978 |
| Předmět: |
Materials science
business.industry technology industry and agriculture General Engineering Oxide Schottky diode chemistry.chemical_element Metal chemistry.chemical_compound Semiconductor chemistry Aluminium visual_art Oxidizing agent visual_art.visual_art_medium Optoelectronics Thin film business Palladium |
| Zdroj: | Journal of Vacuum Science and Technology. 15:1397-1401 |
| ISSN: | 0022-5355 |
| Popis: | Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height. |
| Databáze: | OpenAIRE |
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