InGaP/GaAs Superlattice-Emitter and GaAsBi Base Heterojunction Bipolar Transistor with High Current-Gain Linearity

Autor:	Yi-Chen Wu, Syuan-Hao Liou, Yu-Chi Chen, Te-Kuang Chiang, Jung-Hui Tsai, Pao-Sheng Lin
Rok vydání:	2018
Předmět:	Materials science High current gain business.industry Superlattice Heterojunction bipolar transistor Linearity Optoelectronics General Materials Science business Base (exponentiation) Common emitter Ingap gaas
Zdroj:	Science of Advanced Materials. 10:651-654
ISSN:	1947-2935
DOI:	10.1166/sam.2018.3140
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9b5f7ba196332baf72e573073247229e https://doi.org/10.1166/sam.2018.3140 Zobrazit plný text záznamu