Allotaxial growth of epitaxial Si/FeSi2/Si heterostructures
| Autor: | G. Crecelius, S. Mesters, K. Radermacher, Ch. Dieker, O. Müller, S. Mantl, H. L. Bay |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Condensed matter physics Silicon Annealing (metallurgy) General Physics and Astronomy chemistry.chemical_element Mineralogy Heterojunction Surfaces and Interfaces General Chemistry Condensed Matter Physics Epitaxy Surfaces Coatings and Films chemistry Electrical resistivity and conductivity Crystalline silicon Molecular beam Molecular beam epitaxy |
| Zdroj: | Applied Surface Science. 73:141-145 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(93)90158-8 |
| Popis: | We fabricated Si/FeSi 2 /Si(111) heterostructures by a new method, called molecular beam allotaxy (MBA). Codeposition of silicon and iron at temperatures around 650°C leads to the formation of FeSi 2 precipitates in the crystalline silicon matrix. The subsequent annealing was performed in two steps. First annealing at temperatures in the range 1150–1170°C resulting in the formation of high quality buried epitaxial metallic α-FeSi 2 layers with a minimum yield value of X min = 12%. Cross section transmission electron micrographs (XTEM) reveal these films to be continuous with sharp interfaces. The lowest resistivity for α-FeSi 2 was ϱ = 225 μΩ·cm at room temperature. By a second anneal at temperatures below the phase transition temperature the metallic α-FeSi 2 was transformed to the semiconducting β-FeSi 2 . These first results prove the applicability of MBA for the growth of metallic and semiconducting FeSi 2 layers in Si. |
| Databáze: | OpenAIRE |
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