Epitaxial and Non-Epitaxial Heterogeneous Integration Technologies at NGST

Autor:	Patty Chang-Chien, Dennis W. Scott, Wen Phan, B. Oyama, Peter Nam, Augusto Gutierrez-Aitken, Khanh Thai, R. Sandhu, Kelly Tornquist, Joe Zhou
Rok vydání:	2008
Předmět:	Flexibility (engineering) Space technology Materials science business.industry Semiconductor technology Complex system Microelectronics Wafer business Epitaxy Engineering physics Wafer-level packaging
Zdroj:	MRS Proceedings. 1068
ISSN:	1946-4274 0272-9172
Popis:	To meet increasingly challenging and complex systems requirements, it is not enough to use one single semiconductor technology but to integrate several high performance technologies in an efficient and cost effective way. Heterogeneous integration (HI) approaches lead to a significant higher design flexibility and performance. In this paper we present some of the HI approaches that are being used and developed at Northrop Grumman Space Technology (NGST) that include selective epitaxial growth, metamorphic growth and wafer level packaging (WLP) technology. More recently we are developing a scaled and selective wafer packaging technique to integrate III-V semiconductors with silicon under the COSMOS DARPA program.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9b5b45541a1fe9f04e231fca50fe04e1 https://doi.org/10.1557/proc-1068-c02-02 Zobrazit plný text záznamu Full text from SpringerLink