Energy-Efficient Versatile Memories With Ferroelectric Negative Capacitance by Gate-Strain Enhancement
| Autor: | Yu-Chien Chiu, Guan-Lin Liou, Chun-Hu Cheng, Chun-Yen Chang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Electrical engineering 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Capacitance Ferroelectric capacitor Electronic Optical and Magnetic Materials law.invention Non-volatile memory law 0103 physical sciences Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Leakage (electronics) Negative impedance converter |
| Zdroj: | IEEE Transactions on Electron Devices. 64:3498-3501 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2017.2712709 |
| Popis: | In this brief, we reported a ferroelectric versatile memory with strained-gate engineering. The versatile memory with high-strain-gate showed a >40% improvement on ferroelectric hysteresis window, compared to low-strain case. The high compressive stress induced from high nitrogen-content TaN enhances monoclinic-to-orthorhombic phase transition to reach stronger ferrolectric polarization and lower depolarization field. The versatile memory featuring ferroelectric negative capacitance exhibited excellent transfer characteristics of the sub-60-mVdec subthreshold swing, ultralow off-state leakage of $\mu \text{m}$ and $> 10^{\mathsf {8}}$ on/off current ratio. Furthermore, the ferroelectric versatile memory can be switched by ±5 V under 20-ns speed for a long endurance cycling (~1012 cycles). The low-power operation can be ascribed to the amplification of the surface potential to reach the strong inversion and fast domain polarization at the correspondingly low program/erase voltages. |
| Databáze: | OpenAIRE |
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