Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer

Autor:	Hideto Miyake, Tomohiko Shibata, Kazumasa Hiramatsu, Yoshihiro Kida
Rok vydání:	2003
Předmět:	Diffraction Materials science Physics and Astronomy (miscellaneous) business.industry Vapor phase General Engineering General Physics and Astronomy Epitaxy Mole fraction Stress (mechanics) Lattice constant Sapphire Optoelectronics business Layer (electronics)
Zdroj:	Japanese Journal of Applied Physics. 42:L572-L574
ISSN:	0021-4922
DOI:	10.1143/jjap.42.l572
Popis:	The crystalline quality of AlGaN with high AlN molar fraction grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) was improved by using high-quality epitaxial AlN film on sapphire (0001). Atomically flat AlxGa1-xN (0.2
Databáze:	OpenAIRE
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