A Compact Model and Parameter Extraction Method for a Staggered OFET With Power-Law Contact Resistance and Mobility
| Autor: | Sungyeop Jung, Vincent Mosser, Gilles Horowitz, Jong Woo Jin, Yvan Bonnassieux |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Organic field-effect transistor business.industry Contact resistance Transistor Current crowding Conductivity 01 natural sciences Power law Electronic Optical and Magnetic Materials law.invention Pentacene chemistry.chemical_compound chemistry law Logic gate 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 66:4894-4900 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | We present a drain current model and a consistent parameter extraction method for organic field-effect transistors (OFETs) considering the gate voltage-dependent contact resistance and mobility by power-law. The physical origin of the asymptotic power-law dependence of contact resistance is elaborated based on the current crowding model. The parameters of a new model can be completely extracted without ambiguity by the proposed extraction method based on the linear fitting. Pentacene-based OFETs with the Au source/drain contact in a staggered configuration experimentally validate the proposed model and the extraction method, which further reveal the bulk resistivity as the major contribution to contact resistance. |
| Databáze: | OpenAIRE |
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