Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p + n Junction Diodes Grown on 4H-SiC Mesas
| Autor: | Philip G. Neudeck, Andrew J. Trunek, David J. Spry, Pirouz Pirouz, Kevin M. Speer |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
business.industry Stacking Nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Transmission electron microscopy Etching (microfabrication) Materials Chemistry Silicon carbide Optoelectronics Electrical and Electronic Engineering Thin film business p–n junction Diode Stacking fault |
| Zdroj: | Journal of Electronic Materials. 37:672-680 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-007-0297-z |
| Popis: | This article presents cross-sectional transmission electron microscopy and molten-potassium hydroxide etching studies of (111) 3C-SiC diodes which we previously reported to be free of forward-voltage drift despite abundant electroluminescent linear features presumed to be defects. Our results show that the majority of linear features are stacking faults lying in inclined {111} planes. Additionally, high densities of isolated etch pits (106–108 cm−2) are observed in 3C films grown on stepped 4H mesas, while 3C films nucleated on step-free 4H mesas exhibited orders of magnitude fewer etch pits and stacking faults. Defect formation mechanisms whose impetuses are steps on the 4H-SiC pregrowth mesa are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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