Integrated SOI gate driver for 1200V SiC-FET switches
| Autor: | Bastian Vogler, Iyead Mayya, Sven Buetow, Reinhard Herzer |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry 020209 energy Power inverter Electrical engineering Silicon on insulator High voltage Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Logic level 01 natural sciences Logic gate 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Gate driver business Gate equivalent |
| Zdroj: | 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | Novel gate driver ICs for the control of 1200V SiC-JFET and -MOSFET half bridges based on high voltage silicon on insulator (SOI) technology are presented. The driver ICs features an extended gate voltage range of 20V and due to an innovative level shifter concept the output voltage levels for turn-off and turn-on can be changed in a wide voltage range between −20V…0V and 0V…+20V. The two dies of this multi-chip solution are assembled in a tiny cost effective IC package with excellent electrical and thermal properties. The measurement results demonstrate the driver performance at high voltage switching and power inverter operation. The new driver approach supports the market needs for cost efficient gate driver circuits for SiC devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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