Characterization of critical conditions for fracture during wafer testing by FEM and experiments
| Autor: | Angel Ochoa Brezmes, Cornelia Breitkopf, Andreas Gneupel, Georg M. Reuther |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Finite element method Back end of line Flexural strength Stack (abstract data type) Mechanics of Materials Indentation 0103 physical sciences Wafer testing General Materials Science Composite material 0210 nano-technology Silicon oxide Material properties |
| Zdroj: | Materials Science in Semiconductor Processing. 67:124-140 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2017.05.020 |
| Popis: | In this work, we investigate finite element models of an imprinting scenario of a needle into a thin metallic film together with corresponding experiments in order to analyze the critical conditions that lead to brittle fracture in Back End Of Line (BEOL) bond pad stacks during wafer testing. We investigate the elastic-plastic material properties of the individual BEOL material layers and propose a plasticity law in terms of a stress-strain curve for the aluminum layer. Instrumented indentation testing is undertaken in order to reproduce the conditions that BEOL pad stacks are exposed to during wafer testing. Along with this, physical failure analysis reveals the dominant failure modes in the BEOL stack after indentation. We investigate the influence of silicon oxide and copper layers embedded below the first silicon oxide layer on failure. Finally, we provide an approach value for the fracture strength of the silicon oxide film that shows good agreement with previous literature data. |
| Databáze: | OpenAIRE |
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