Cubic β-silicon carbide films on silicon substrates
| Autor: | N. C. Tombs, J. F. Fitzgerald, J. J. Comer |
|---|---|
| Rok vydání: | 1965 |
| Předmět: |
Materials science
Silicon Metallurgy Doping chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Epitaxy Micropipe Electronic Optical and Magnetic Materials Carbide chemistry.chemical_compound chemistry Electron diffraction Chemical engineering Materials Chemistry Silicon carbide Electrical and Electronic Engineering |
| Zdroj: | Solid-State Electronics. 8:839-842 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(65)90093-6 |
| Popis: | Highly adherent films of cubic β-silicon carbide have been grown on single-crystal silicon substrates by heating in the presence of graphite in an argon atmosphere. The reaction process and film characteristics were investigated by electron diffraction. Initially, a single-crystal β-silicon carbide film is formed, having an epitaxial relationship to the silicon substrate. Growth proceeds by diffusion of a carbon-bearing species, from the gas phase, inward to the silicon-silicon carbide interface. Beyond a certain thickness, growth becomes polycrystalline. Both n - and p -type films resulted from spontaneous doping, but high resistivities were not observed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|