Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

Autor:	Weijun Luo, Fuhua Yang, Hongxin Liu, Cuimei Wang, L.W. Guo, Xiaoliang Wang, Yanling Chen, Jianping Li, Hongling Xiao, Jinmin Li, Junxue Ran
Rok vydání:	2008
Předmět:	Fabrication Materials science business.industry Transconductance General Engineering Electrical engineering Substrate (electronics) Chemical vapor deposition High-electron-mobility transistor Full width at half maximum Optoelectronics Metalorganic vapour phase epitaxy business Current density
Zdroj:	Microelectronics Journal. 39:1108-1111
ISSN:	0026-2692
DOI:	10.1016/j.mejo.2008.01.083
Popis:	AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (111) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8mmx5mm, XRD GaN (0002) full-width at half-maximum (FWHM) of 661arcsec and surface roughness of 0.377nm. The device with a gate length of [email protected] and a gate width of [email protected] demonstrated maximum drain current density of 304mA/mm, transconductance of 124mS/mm and reverse gate leakage current of [email protected]/mm at the gate voltage of -10V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9b2470e55d15bed6bd884a3f7e801cab https://doi.org/10.1016/j.mejo.2008.01.083 Zobrazit plný text záznamu Full Text from ScienceDirect