Opto-electronic properties of different black silicon structures passivated by thermal ALD deposited Al2O3

Autor:	Martin Otto, Matthias Kroll, Thomas Käsebier, Benjamin Gesemann, Ralf B. Wehrspohn, Johannes Ziegler, Kevin Füchsel, Xiaopeng Li, Alexander Sprafke
Rok vydání:	2013
Předmět:	chemistry.chemical_compound Atomic layer deposition Materials science Solar cell efficiency Absorption spectroscopy chemistry Passivation Thermal Black silicon Opto electronic Nanotechnology Visible spectrum
Zdroj:	Renewable Energy and the Environment.
Popis:	Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by thermal ALD deposited Al2O3.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9b1ea6dd8dc460b2cd469872e9ae60f5 https://doi.org/10.1364/pv.2013.pm1c.3 Zobrazit plný text záznamu