The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells
| Autor: | V. Ya. Aleshkin, D. M. Gaponova, D. I. Kryzhkov, Z. F. Krasilnik, L. V. Gavrilenko |
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| Rok vydání: | 2016 |
| Předmět: |
Physics
Photoluminescence Condensed matter physics Condensed Matter::Other Exciton Relaxation (NMR) Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics 010305 fluids & plasmas Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Stark effect 0103 physical sciences symbols Photoluminescence excitation 010306 general physics Excitation Quantum well |
| Zdroj: | Semiconductors. 50:1691-1695 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616120034 |
| Popis: | The processes associated with the transfer of excitonic excitations between tunnel-uncoupled quantum wells (QW) and the influence of the local electric field were investigated in AlGaAs/GaAs heterostructures by the method of photoluminescence excitation (PLE) spectroscopy at low (4.2 K) temperature. The variation in the intensity of photoluminescence (PL) from the wider QW under resonant excitation of excitonic transition in the adjacent narrow QW has been observed. The difference in the PL maximum position and intensity of the wider QW under resonance excitation of the narrow one is explained by the influence of quantum-confined Stark effect on the process of exciton recombination. |
| Databáze: | OpenAIRE |
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