Mechanical properties of nanoporous organo silicate glass films for the use in integrated circuits interconnects

Autor:	A. S. Sigov, Alexey S. Vishnevskiy, K. A. Vorotilov, Dmitriy Seregin, Georgiy Orlov, Ivan Ovchinnikov
Rok vydání:	2020
Předmět:	chemistry.chemical_classification Materials science Nanoporous Semiconductor device fabrication Atomic force microscopy Modulus Integrated circuit Polymer Dielectric law.invention chemistry law Composite material Silicate glass
Zdroj:	PROCEEDINGS OF THE XV INTERNATIONAL CONFERENCE «PHYSICS OF DIELECTRICS».
ISSN:	0094-243X
DOI:	10.1063/5.0033267
Popis:	Nanoporous organosilicate glass (OSG) films with low dielectric constant (low-k) prepared by spin-on technique are the prospective materials for sub-5 nm technology node in semiconductor manufacturing technology. Nanoporous OSG films with different content of methyl -CH3 terminal groups were studied. AFM technique in PFQNM mode was adopted for the Young's modulus evaluation of low-k dielectric films. It is shown that the Young's modulus decreases with the methyl groups concentration increase as a result of polymer structure transformation due to the loss of the silicon-oxygen network continuity.
Databáze:	OpenAIRE
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