A finite difference method modeling for IGBT and diode in PSPICE
| Autor: | Lei Li, Xuhui Wen, Jinlei Meng, Puqi Ning |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Physics
Diffusion equation PIN diode Finite difference method Energy Engineering and Power Technology Charge (physics) Insulated-gate bipolar transistor Topology law.invention symbols.namesake Fourier transform Control and Systems Engineering law symbols Power semiconductor device Electrical and Electronic Engineering Diode |
| Zdroj: | Chinese Journal of Electrical Engineering. 3:85-93 |
| ISSN: | 2096-1529 |
| DOI: | 10.23919/cjee.2017.8250428 |
| Popis: | In this paper, a novel modeling approach for both PiN diode and IGBT is presented. In this model, the carrier diffusion equation, which retains the distributed nature of charge dynamics in bipolar power devices, is solved directly by finite difference method in PSPICE. The physical basis of this model and some practical considerations are introduced. Compared with conventional Fourier based IGBT model, the presented model keeps higher simulation speed and comparable high accuracy. These features were also verified by simulations and experiments. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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