Photovoltaic action from In x Ga 1‐x N p‐n junctions with x > 0.2 grown on silicon

Autor:	Kin Man Yu, Wladek Walukiewicz, Joel W. Ager, Iulian Gherasoiu, Vincent M. Kao, Lothar A. Reichertz
Rok vydání:	2011
Předmět:	Materials science Equivalent series resistance Silicon business.industry Open-circuit voltage Doping chemistry.chemical_element Condensed Matter Physics law.invention Semiconductor chemistry law Solar cell Optoelectronics Thin film business Diode
Zdroj:	physica status solidi c. 8:2466-2468
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201001169
Popis:	In this paper, we report systematic investigation of the structural and electronic properties of GaN and InxGa1-xN alloys with x up to 0.31 grown on Si (111) substrate. P-type doping of InxGa1-xN using Mg has been achieved consistently with magnesium concentrations up to 1021 atoms/cm3. The first results on photovoltaic action in InGaN p-n junctions with ∼20% In fraction grown on silicon are also reported. An open circuit voltage (Voc) of almost 1 V was measured under concentrated (20 x sun) AM1.5G condition. The diode shows the onset of a photoresponse at about 2.6 eV. Relatively low shunt and high series resistance are the key factors limiting performance of the InGaN cells with larger In content (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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