Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs

Autor:	Harrison P. Lee, Jeffrey W. Teng, Nelson Sepulveda-Ramos, John D. Cressler
Rok vydání:	2021
Zdroj:	2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
DOI:	10.1109/bcicts50416.2021.9682470
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9b04dafcd837090650b9a97298ab7422 https://doi.org/10.1109/bcicts50416.2021.9682470 Zobrazit plný text záznamu