Monte Carlo Study of Transport Properties of InN

Autor:	Vassil Palankovski, S. Vitanov
Rok vydání:	2008
Předmět:	Electron mobility chemistry.chemical_compound Drift velocity Indium nitride Materials science chemistry Band gap Monte Carlo method Dynamic Monte Carlo method Monte Carlo method in statistical physics Molecular physics Monte Carlo molecular modeling
Zdroj:	Springer Proceedings in Physics ISBN: 9781402084249
DOI:	10.1007/978-1-4020-8425-6_24
Popis:	We use a Monte Carlo (MC) approach to investigate the electron transport in Indium Nitride (InN). Simulations with two different setups (one with a bandgap of 1.89 eV and one with bandgap of 0.69 eV) and accounting for all relevant scattering mechanisms are conducted. Results for electron mobility as a function of free carrier concentration and electric field are compared to previous studies and discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9b03f02ed8cc3ff1ff44bfc8f1ec5052 https://doi.org/10.1007/978-1-4020-8425-6_24 Zobrazit plný text záznamu