| Popis: |
Summary Global water stress and challenges for producing sufficient supplies of fit-for-purpose water are amplifying. Atomically engineered interfaces are emerging as a powerful tool in the fabrication of advanced water treatment materials. Atomic layer deposition (ALD) and recently developed related methods, such as sequential infiltration synthesis (SIS), offer a tremendously diverse library of chemistries for interface functionalization. Thickness, stoichiometry, and physicochemical properties can be manipulated with precision. We review their fundamental physical chemistry and processing factors. ALD/SIS engineering strategies, including direct deposition, growth with intermediate layers, and secondary treatment are presented with realization of efficient water treatment. We lay out a pathway to establishing an ALD/SIS-based universal functionalization platform for water treatment, including sensitization strategies, in situ regulation, secondary reactions, and simulation/machine learning. We also provide a perspective on ALD/SIS-based interface engineering via synergy with other widely used interface engineering techniques to develop facile, versatile, and energy-efficient strategies for tackling increasingly complex water challenges. |
