Relationship between infrared absorption and resistivity in liquid‐encapsulated Czochralski semi‐insulating GaAs crystals

Autor:	Hideo Okada, Tsuguo Fukuda, Takeshi Obokata, Tooru Katsumata
Rok vydání:	1987
Předmět:	Materials science Hall effect Infrared Electrical resistivity and conductivity Doping Analytical chemistry General Physics and Astronomy Infrared spectroscopy Crystal growth Molar absorptivity Crystallographic defect
Zdroj:	Journal of Applied Physics. 61:1469-1474
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.338078
Popis:	The relationship between the infrared absorption coefficient and the resistivity was examined experimentally in undoped and In‐doped liquid‐encapsulated Czochralski grown semi‐insulating GaAs. The resistivity increases from ∼106 to 5×108 Ω cm with an increase in the infrared absorption coefficient at 1 μm from 0.6 to 1.0 cm−1 in Ga‐rich GaAs, and decreases from about 5×108 to 5×106 Ω cm with an increase in the infrared absorption coefficient from 1.0 to 3.0 cm−1 in As‐rich GaAs. This fact provides a physical basis for the use of infrared transmission topography as a nondestructive, rapid characterization technique for the evaluation of the two‐dimensional uniformity in resistivity of semi‐insulating GaAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9b0182600848b5f3ad8cba39420e1436 https://doi.org/10.1063/1.338078 Zobrazit plný text záznamu