Floating Gate Nonvolatile Memory Using Individually Cladded Monodispersed Quantum Dots
| Autor: | Ravi Shankar R. Velampati, Evan Heller, El-Sayed Hasaneen, Faquir C. Jain |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon Oxide chemistry.chemical_element 02 engineering and technology 01 natural sciences law.invention Computer Science::Hardware Architecture chemistry.chemical_compound Computer Science::Emerging Technologies law 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics business.industry Transistor Electrical engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Cladding (fiber optics) Threshold voltage Non-volatile memory chemistry Hardware and Architecture Quantum dot Logic gate Optoelectronics 0210 nano-technology business Software |
| Zdroj: | IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 25:1774-1781 |
| ISSN: | 1557-9999 1063-8210 |
| DOI: | 10.1109/tvlsi.2016.2645795 |
| Popis: | This paper presents nonvolatile memory characteristics of a quantum dot gate floating gate nonvolatile memory (QDNVM) that employs SiOx-cladded silicon quantum dots as discrete charge storage nodes of the floating gate. The cladding of Si quantum dots and control of their size are shown to result in a faster access and improved retention time. The floating gate is formed by site-specific self-assembly of SiOx-Si quantum dots on the tunnel oxide layer over the p-region between source and drain of an n-channel field-effect transistor (FET). Experimental data on fabricated long channel devices show threshold voltage shift as a function of duration and magnitude of the electrical stress applied during the “Write” operation. Current–voltage characteristics ( $I_{\mathrm {D}}$ – $V_{\mathrm {D}}$ and $I_{D}$ – $V_{G})$ are presented before and after stress. The electrical characteristics are explained using a quantum dot gate FET model which includes the threshold voltage shift ( $\Delta \text{V}_{\mathrm { {TH}}})$ as a function of charge on the floating gate quantum dots due to applied electrical stress. |
| Databáze: | OpenAIRE |
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