Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon

Autor:	Masakiyo Matsumura, Shinji Hoshino, Satoshi Sugahara, Keiji Ikeda, Shigeru Imai, Eiji Hasunuma
Rok vydání:	1998
Předmět:	Materials science Silicon Hydrogen Analytical chemistry chemistry.chemical_element Nanotechnology Surfaces and Interfaces Condensed Matter Physics Residence time (fluid dynamics) Chemical reaction Surfaces Coatings and Films Gas phase chemistry Monolayer Atomic layer epitaxy Growth rate
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:679-684
ISSN:	1520-8559 0734-2101
Popis:	Atomic layer epitaxy of silicon has been studied by alternating exposures of atomic hydrogen and SiH2Cl2. An ideal growth rate of 1 monolayer per cycle has been achieved with a wide temperature window from 550 °C to 610 °C under long SiH2Cl2 residence time and high pressure conditions. These requirements seem to come from the generation of dense SiHCl, the desirable precursor, by gas-phase reaction of SiH2Cl2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9af45306cb0bc5b632e76eb842295cb1 https://doi.org/10.1116/1.581018 Zobrazit plný text záznamu