The Impact of Surface Processes on the J–V Characteristics of Organic Solar Cells
| Autor: | J. Gojanović, N. Ćirović, Petar Matavulj, Sandra Zivanovic, Ali R. Khalf |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Condensed matter physics Organic solar cell Thermionic emission 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 7. Clean energy 01 natural sciences Cathode Electronic Optical and Magnetic Materials law.invention Anode law 0103 physical sciences Solar cell Electrode Diffusion current Electrical and Electronic Engineering 010306 general physics 0210 nano-technology |
| Zdroj: | IEEE Journal of Photovoltaics. 10:514-521 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2020.2965401 |
| Popis: | In this article, the impact of surface recombination on the J–V characteristics of organic solar cells (OSC) was analyzed. The investigation was carried out using the drift-diffusion model in which the surface recombination of holes and electrons on both electrodes, anode and cathode, were taken into account through boundary conditions. In order to perceive the individual influence of the surface recombination, the equilibrium thermionic concentrations for holes and electrons on contact interfaces were neglected. As the reference point of our analysis, the measured In2O5Sn/ poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)/ poly(3-hexylthiophene-2,5-diyl): indene-C60 bisadduct /Al solar cell J–V curve was reproduced by our model. The surface recombination velocities (SRVs) for electrons and holes on both contacts were further varied and J–V curves were generated. For simplicity, it was assumed that diffusion current dominates at contacts. For the sake of systematization, three categories of SRV values were introduced, S —small for blocking contact, L —large for conductive contact, and M —medium for contact which is neither blocking nor conductive. The analysis was conducted for different ratios of electron and hole mobilities. It was established that in order to obtain regular J-shape J–V characteristics in OSCs, both contacts should be conductive, for both holes and electrons. This implies that the concept of contact selectivity in OSCs should be reexamined in terms of its physical description and relation to the SRVs values. |
| Databáze: | OpenAIRE |
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