Amorphous HgCdTe infrared photoconductive detector with high detectivity above 200 K

Autor:	Weida Hu, Faqiang Xu, Rong-bin Ji, Jun Zhao, Xiaoshuang Chen, Yan-li Shi, Lin Wang, Wei Lu, Jun Wang
Rok vydání:	2011
Předmět:	Amorphous silicon Photocurrent Materials science Physics and Astronomy (miscellaneous) Silicon Infrared business.industry Photoconductivity chemistry.chemical_element Amorphous solid chemistry.chemical_compound chemistry Optoelectronics Infrared detector business Dark current
Zdroj:	Applied Physics Letters. 99:113508
ISSN:	1077-3118 0003-6951
Popis:	Temperature dependence of dark current (Id) and photocurrent (Iph) is reported for Si-based amorphous HgCdTe (a-MCT) infrared photoconductive detector at 80-300 K. It is indicated that an uncooled a-MCT infrared detector can be fabricated based on the Si-based a-MCT. To describe the transport process, the Mott and Davis model [Davis and Mott, Philos. Mag. 22, 903 (1970)] is proposed as the conducting model originally developed for amorphous silicon. A possible mechanism of the carrier transports is shown in the a-MCT materials. The transport transition between the localized and extended carriers leads to the maximal Iph/Id above 200 K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9add59a8f19b7704cd5acbadabcb2b03 https://doi.org/10.1063/1.3638459 Zobrazit plný text záznamu