Development of Cu2ZnSnS4 films from a non-toxic molecular precursor ink and theoretical investigation of device performance using experimental outcomes
| Autor: | R. Silva-González, Mou Pal, D. Mora-Herrera, F.E. Cancino-Gordillo |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry Annealing (metallurgy) Band gap 020209 energy 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology law.invention chemistry.chemical_compound chemistry law Electrical resistivity and conductivity Hall effect Solar cell 0202 electrical engineering electronic engineering information engineering engineering Optoelectronics General Materials Science Kesterite Crystallite CZTS 0210 nano-technology business |
| Zdroj: | Solar Energy. 199:246-255 |
| ISSN: | 0038-092X |
| Popis: | In this paper, we reported a facile and cost effective way to deposit Cu2ZnSnS4 (CZTS) films using a non-toxic precursor ink and photovoltaic performance of single junction CZTS solar cell by implementing experimentally obtained optical and electrical parameters of our CZTS film in a simulation program known as SCAPS-1D (solar cell capacitance simulator in one dimension). The ink was deposited over glass substrates by drop casting method and the as-deposited films were subjected to thermal annealing at 450 and 500 °C in N2 atmosphere. X-ray diffraction and Raman scattering analysis revealed the polycrystalline nature of CZTS films with tetragonal kesterite phase. The values of optical band gap (Eg) were found to vary in between 1.26 and 1.41 eV depending on the annealing condition. Hall measurement showed p-type electrical conductivity with good electrical properties, yielding resistivity (ρ) in the range of 18.6–1.9 × 102 Ω-cm, carrier concentration (n) = 6.65 × 1016–8.72 × 1017 cm−3 and mobility (μ) = 10.6–19.4 cm2/Vs. Numerical simulation of CZTS thin film solar cells with CdS buffer layer was modeled through SCAPS-1D using the experimental data of CZTS films obtained in this work. A maximum efficiency of 14.12% was obtained considering all possible defects and radiative recombination which can be occurred under realistic situation. |
| Databáze: | OpenAIRE |
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