Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency
| Autor: | Yating Wan, Justin Norman, Robert W. Herrick, Catherine Jan, Arthur C. Gossard, Pari Patel, Katherine Turnlund, Zeyu Zhang, Daehwan Jung, Michael Kennedy, John E. Bowers |
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| Rok vydání: | 2017 |
| Předmět: |
Amplified spontaneous emission
Materials science Silicon photonics business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention 020210 optoelectronics & photonics CMOS Quantum dot law Quantum dot laser 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering Photonics 0210 nano-technology business Biotechnology |
| Zdroj: | ACS Photonics. 5:1094-1100 |
| ISSN: | 2330-4022 |
| Popis: | Quantum dot lasers epitaxially grown on Si are promising for an efficient light source for silicon photonics. Recently, considerable progress has been made to migrate 1.3 μm quantum dot lasers from off-cut Si to on-axis (001) Si substrates. Here, we report significantly improved performance and reliability of quantum dot lasers enabled by a low threading dislocation density GaAs buffer layer. Continuous-wave threshold currents as low as 6.2 mA and output powers of 185 mW have been achieved at 20 °C. Reliability tests after 1500 h at 35 °C showed an extrapolated mean-time-to-failure of more than a million hours. Direct device transparency and amplified spontaneous emission measurements reveal an internal optical loss as low as 2.42 cm–1 and injection efficiency of 87%. This represents a significant stride toward efficient, scalable, and reliable III–V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with CMOS foundries. |
| Databáze: | OpenAIRE |
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