AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

Autor:	Po Shan Hsu, Kathryn M. Kelchner, Daniel A. Cohen, Casey Holder, Anurag Tyagi, James S. Speck, Matthew T. Hardy, M. Robert Farrell, Hiroaki Ohta, Steven P. DenBaars, Shuji Nakamura, Chia-Yen Huang, Kenji Fujito, Daniel A. Haeger
Rok vydání:	2009
Předmět:	Materials science Laser diode business.industry General Engineering General Physics and Astronomy Epitaxy Laser Cladding (fiber optics) law.invention Wavelength Transverse plane Optics law Lasing wavelength Optoelectronics business Diode
Zdroj:	Applied Physics Express. 3:011002
ISSN:	1882-0786 1882-0778
DOI:	10.1143/apex.3.011002
Popis:	We demonstrate electrically driven InGaN based laser diodes (LDs), with a simple AlGaN-cladding-free epitaxial structure, grown on semipolar (2021) GaN substrates. The devices employed In0.06Ga0.94N waveguiding layers to provide transverse optical mode confinement. A maximum lasing wavelength of 506.4 nm was observed under pulsed operation, which is the longest reported for AlGaN-cladding-free III-nitride LDs. The threshold current density (Jth) for index-guided LDs with uncoated etched facets was 23 kA/cm2, and 19 kA/cm2 after application of high-reflectivity (HR) coatings. A characteristic temperature (T0) value of ~130 K and wavelength red-shift of ~0.05 nm/K were confirmed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9ab5ef85b6f9335b3c352a8051363652 https://doi.org/10.1143/apex.3.011002 Zobrazit plný text záznamu